Solar cell simulation using pc1d simulation
Furthermore, the optimized parameters obtained from simulations show good agreement with corresponding values of one commercial crystalline solar cell. Hence, the paper demonstrates the best magnitudes for emitter thickness, base thickness, emitter dopant density and base dopant density are 0.1 μm, 100 μm, 10 20 cm −3 and 5 × 10 16 cm −3 respectively. We demonstrate the use of some of these features to explore the importance of trap-assisted tunneling at heavily doped junctions in material with low carrier. The program uses a finite-element numerical method for solving the coupled nonlinear equations for carrier generation, recombination and transport in the device and can be used both Corresponding author. The results were validated by investigating the factors related to the carrier transmission mechanism including diffusion length, minority carrier lifetime, photogeneration and conductivity in a cell. Introduction PC1D is one of the most commonly used modelling programs for simulation of crystalline semiconductor solar cells. According to open circuit voltage ( V oc) and short circuit current ( I sc) in I–V curves, the optimum magnitudes of these parameters were determined. By varying the parameters such as emitter thickness, base thickness, emitter dopant density and base dopant density, the corresponding I–V curves were generated. In this study, the optimal magnitudes of silicon solar cell key parameters were calculated and verified using the PC1D simulation program.